Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells

Abstract

The band structures of Ga 1− x In x N y As 1− y /GaAs compressive-strained quantum wells (QWs) are investigated using 6×6 k· p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. By varying the well width and N composition, the effects of quantum confinement and compressive strain are examined. The valence subband energy dispersion curves, TE and TM optical gain spectra of three possible QW structures emitting at 1.3 μm wavelength are given. Our calculations show that the Ga 0.7In 0.3N 0.016As 0.984/GaAs QW with well width of 43 Å emitting at 1.3 μm has maximum optical gain 3270 cm −1 and differential gain up to about 0.88×10 −15 cm 2 at the carrier density N=6×10 18 cm −3. It is suitable for high-speed laser emitting at 1.3 μm wavelength.