Abstract
In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform. For p-channel HFETs, normally-off operation and low gate leakage were obtained by using a recessed-gate structure and a 20 nm Al2O3 thin film grown by thermal atomic layer deposition as the gate insulator. The normally-off p-channel HFETs exhibited a threshold voltage of <−0.9 V and a high on/off current ratio of >105. By introducing an Al0.05Ga0.95N channel instead of a conventional GaN channel layer, the threshold voltage increased from 1.1 V to 1.5 V and the breakdown voltage almost doubled from 270 to 580 V for n-channel HFETs. These results indicate that n-channel and p-channel HFETs based on p-GaN/Al0.2Ga0.8N/Al0.05Ga0.95N heterostructures have a great potential for monolithic integration.
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