Abstract
Nitridation and oxidation reactions at SiC/SiO2 interfaces during NO annealing were investigated and their quantitative impacts on the channel mobility were modeled. We evaluated the NO annealing condition dependence of nitrogen atom concentration at the SiC/SiO2 interfaces ([N]) and increased oxide thickness (ΔTOX), as indices of the nitridation and oxidation reactions, respectively. By using the obtained [N] and ΔTOX, the experimental mobility was well reproduced in an empirical formula. This empirical formula enables evaluation of the quantitative impact of the nitridation and oxidation reactions on the mobility. From the empirical formula, it was expected that the mobility would be further increased by lowering the annealing temperature from the investigated temperature range. However, an exponential increase in both NO gas consumption and processing time is also predicted, which leads to the conclusion that the further decrease in annealing temperature would be impracticable.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
