Investigation of NbOx-based volatile switching device with self-rectifying characteristics

Abstract

The niobium oxide based nonlinear devices were fabricated and analyzed. The electrical tests present good control over device-to-device variation and stable endurance more than 106. The conduction mechanism was comprehensively discussed. The low-voltage region relates to SCLC, while Schottky and F-N tunneling are responsible for negative and positive high-voltage region respectively. Consequently, the volatile switching may originate from the capture and release of electrons by traps in SCLC mechanism, and this relaxation phenomenon is evaluated quantitatively.