Abstract
Abstract We studied 3C-SiC (100) surfaces with various reconstructions by high-resolution electron energy-loss spectroscopy (HREELS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). After annealing at 1325 K oxygen desorbs and a Si-terminated (2 × 1) surface is obtained. Subsequent annealing at higher temperatures leads to the sublimation of Si, which results in a carbon-rich c(2 × 2) surface. We exposed (2 × 1) and c(2 × 2) surfaces to atomic hydrogen, and were able to observe the HSiH stretching vibration on silicon carbide.
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