Investigation of micropipe defect terminating during SiC crystal growth

Abstract

Micropipe is a vital defect for fabricating SiC based devices. In order to understand the evolution of micropipe during growth process, the authors studied axial cuts sliced from different parts of the sublimation grown SiC single crystals. The cuts have been characterised using optical microscopy, etching in molten mixed KOH and K2CO3, scanning electron microscope and X-ray photoelectron spectroscopy. It is found that second phase inclusion (silicon droplet) is contributing not only to the formation of micropipe defect but also to its termination during SiC growth process. And X-ray photoelectron spectroscopy measurement result shows that growth interface can be demarcated obviously without intentionally doping any other impurity, which offers a good and simple method for observing crystal growth process.