Abstract
InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved and InGaN QDs exhibit a relatively uniform size distribution and good dispersity. Strong localization effect in as-grown InGaN QDs has been evidenced by temperature-dependent photoluminescence (PL). The variation of peak energy is as small as 35 meV with increasing temperature from 10 K to 300 K, implying excellent temperature stability of emission wavelength for InGaN MQDs. Moreover, the radiative and nonradiative recombination times were calculated by time-resolved PL (TRPL) measurements, and the temperature dependence of PL decay times reveal that radiative recombination dominates the recombination process due to the low dislocation density of QDs structure.
Highlights
In recent years, InGaN alloy and related heterostructures have been widely applied to visible light emitters diodes (LEDs) and laser diodes (LDs) for applications such as solid-state lighting, high-density optical storage, and full-color display, due to excellent optical performance and the emission spectrum covering the full visible light region [1,2,3,4]
This is consistent with the phenomenon that Reflection high energy electron diffraction (RHEED) maintains sharp and streaky patterns during the growth process of GaN barriers shown in Figure 1b, which is indicative of a two-dimensional growth model
Smooth surface morphology of GaN barriers is important for the multilayer growth of InGaN quantum dots (QDs) and optical properties of related devices
Summary
InGaN alloy and related heterostructures have been widely applied to visible light emitters diodes (LEDs) and laser diodes (LDs) for applications such as solid-state lighting, high-density optical storage, and full-color display, due to excellent optical performance and the emission spectrum covering the full visible light region [1,2,3,4]. Quantum dots (QDs) structure has been considered an alternative for InGaN-based long wavelength optical devices. InGaN QDs-based LEDs and LDs operating from blue to red emission ranges have recently been prepared [12,13,16], even though the crystal quality and device performances are still far away from practical applications
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