Abstract
Amorphous hydrogenated silicon–carbon (a-SiC r :H) films grown by decomposing silane–methane mixtures in a low-frequency (55 kHz) glow discharge at different methane concentrations are studied by IR spectroscopy. The absorption band in the range 1850–2300 cm–1 is decomposed into four Gaussian components, and the results are compared with calculations in the chemical induction model. It is found that the carbon atoms are nonuniformly distributed in the nearest neighbor environment of the SiH groups in the form of HSi–Si3 – n C n (n= 0–3) structures. The random bonding model is used to evaluate the probability of formation of each HSi–Si3 – n C n structure as a function of the C/Si ratio. Comparison with experimental data points to an inhomogeneous microstructure of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
