Abstract
The present work considers transient electrothermal simulation of sub-micrometer silicon device and electron-phonon interactions in electrical and thermal fields. A coupled thermal and electrical model is developed for a silicon + + − − n n n structure consisting of the hydrodynamic equations for electron transport and energy conservation equations for phonon. The results indicate that, for one electric field the lattice temperature gradient has significant effect on the magnitude of electric current. The transient phonon temperature affects the device performance due to the change of mobility and gradient temperature of electron. At an external voltage of 0.1 V, calculations show that an increase in the junction boundary temperature by 100 °C, cause increasing the drain current by 16% at 3 picosecond and decreases it by 17% up to steady state condition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
