Abstract
AbstractThe film of MgO-AlN system was manufactured by the conventional magnetron sputtering process. It is observed that a Fermi level could be raised by letting AlN composition increase, confirmed by ultraviolet (UV) photon energy dependence of the electronic emission, and investigated with XPS that the surface reaction, such as surface hydroxide / carbonate of MgO, could be controlled in addition of AlN. The glow discharge characteristics for MgAlON films were evaluated from the minimum pressure that a glow discharge is started under constant RF power, which correspond to the result of the analysis for the secondary electron emission coefficient, using Metastable De-excitation Spectroscopy (MDS).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
