Abstract
Gallium (Ga) doping in Czochralski (CZ) Si crystal growth has been investigated. When Ga was added directly to the molten Si in a rapid operation, the Ga concentration in the crystals was the same as the designed values. It was found that only a few Ga atoms evaporated from Si melt surface during crystal growth. From measurements made in steps of several millimeters along the growth direction, it was confirmed that there may be quite large variations in the Ga concentration in the crystal, resulting from fluctuations in the growth rate in conjunction with very small segregation coefficient of Ga.
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