Abstract
AbstractThermally activated metallurgical reactions between GaAs and various metals of potential importance in contact structures were studied using Heavy Ion Rutherford Backscattering Spectrometry (HIRBS). The improved mass resolution obtained with heavy ions (160) as projectiles for backscattering measurements facilitated the identification of the various intermetallic compounds formed on GaAs. The metal/GaAs systems investigated in this study included Pt/GaAs, Pd/GaAs, and Ni/GaAs. Three different binary compounds were formed in the Pt/GaAs system during annealing. Complete reaction between 1200Å of Pt and GaAs was observed after annealing at 500°C for 20 min. Reactions in Pd/GaAs and Ni/GaAs systems were, however, very different from that of Pt/GaAs. Both Pd and Ni formed ternary compounds with GaAs. Detailed information on the various compound compositions of the three systems as measured by HIRBS is presented. Comparisons of results on similar systems obtained by using other analytical techniques are discussed.
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