Investigation of metal-semiconductor interface states by constant emission rate and constant capture rate capacitance spectroscopies

Abstract

Based on capacitance measurements, the procedure to derive the energy distributions, capture cross sections and nature of interface states of metal/Si Schottky diodes is described. Examples are given for Au, Ag, Ni on n or p cleaved Si. Occurrence and origin of negative differential capacitance are discussed. Finally, the interface state characteristics obtained are compared with the physicochemical nature of the interface.