Abstract
The regularities of the change of electrophysical properties of memristor structures based on porous films of titanium dioxide are considered at their modification by carbon. It is shown that the introduction of impurity results in the significant change of the electrophysical properties of memristor structures based on porous films of titanium dioxide. The purpose of this paper is to reveal the regularities between the electrophysical properties of elements of non-volatile memristor memory and the phenomena of switching and memory at atmospheric pressure.
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