Investigation of low-power comb generation in silicon microresonators from dual pumps

Abstract

Here, the influence of pump powers for silicon microresonator-based Kerr comb generation (KCG) was investigated theoretically and experimentally in two types of dual-pumped KCG. One employs dual pumps at different free spectral range (FSR) spacings of the resonator for broadband comb spectrum and the other to produce comb lines at one FSR spacing for low pump powers. The KCG is modeled by including nonlinear absorption and mode interaction into the Lugiato–Lefever equation. Both the theoretical and the experimental results indicate that the KCG with pump powers inside the ring of tens of milliwatts would be limited by high nonlinear absorption even with a 25 V reverse bias to deplete free carriers. The most efficient comb spectrum occurs with recirculating pump power in the ring cavity of 13 mW (0.3 mW pump power in the bus waveguide) at 25 V reverse bias. Generally, for silicon KCG at the telecom wavelengths, the use of low pump powers and reverse bias is essential. At 25 V reverse bias, increasing the stored pump power in the ring to 160 mW would suppress the KCG and produce a similar number of comb lines as 1 mW recirculating pump power. This work advances our understandings of silicon KCG in the telecom band.