Abstract
A method of scanning photodielectric spectroscopy of crystals has been suggested. It is based on the measurements of small increments of the real Δε′ and imaginary Δε″ parts of effective dielectric permittivity at a smooth variation of the photoexcitation wavelength λ. The spectral functions Δε′(λ) and Δε″(λ) are presented in a complex plane, that is, in parametric view, and their characteristic points are determined. Application of this method on Cd1−xZnxTe crystals showed a possibility of determining the energy position of the localized states generated in the forbidden zone by the intrinsic structure defects.
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