Abstract
This paper presents the results of experimental studies of the influence of the technological parameters of a focused ion beam (FIB) on the process of local ion-stimulated deposition of carbon and tungsten when creating elements of vacuum nanoelectronics. The dependences are obtained illustrating the influence of the time of the FIB exposure at a point on the geometric parameters of the structures. Experimental samples of vacuum field-emission diodes based on semiconductor-metal-dielectric structures were fabricated by ion-stimulated carbon deposition. A technological process for creating field-emission diodes has been developed. The prospects of applying the FIB method for creating structures of vacuum field emission nanoelectronics are demonstrated.
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