Abstract
A special methodology for determination of light element concentrations in subsurface layers of solids is developed. The clue of this methodology is simultaneous application of Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection (ERD). The first analytical technique is used as a tool enabling the precise measurement of the number of He ions irradiating the target whilst the second one is appropriate for an analysis of a target containing light elements. The measurements of atomic concentrations in amorphous hydrogenated silicon carbide (a-SiC x :H) and in amorphous hydrogenated carbon (a-C:H) were done applying the described method (results for a-SiC x :H only are presented in the paper). The possibility for high precision measurements of depth distributions of light elements is also discussed.
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