Abstract
Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.
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