Abstract
Sputter-deposited Al-doped zinc oxide (ZnO : Al) is an interesting transparent conductive oxide (TCO) material for application in electronic devices and thin-film solar cells. A phenomenon in the planar magnetron sputtering of the ZnO : Al films that is not well investigated as yet are the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material, whereby the lateral distribution of the film properties depends strongly on the sputtering parameters. In this work, the lateral distributions of the electrical, optical, and surface structure properties of the ZnO : Al films prepared by the rf magnetron sputtering on glass substrates are investigated across a distance of 64 mm using the four-point probe technique, optical transmission and reflection measurements, X-ray diffraction, and scanning electron microscopy. We find that the lateral variations of the parameters of the ZnO : Al films prepared by the rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. Hence, it seems that the sputter-deposited ZnO : Al is a promising TCO material for large-area thin-film solar cells.
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