Abstract
The p-n junction electric field (Fpn) of InAs quantum dot solar cell (QDSC) structure was investigated using photoluminescence and photoreflectance spectroscopy. Quantum dot (QD) was fabricated by the Stranski-Krastanov (S–K) and sub-monolayer (SML) methods. From photoreflectance results, the higher Fpn of SML than S–K QDSC from 20 K to 160 K presents that the background carrier concentration of SML QDSC decreases, due to the reduced defect density. Moreover, the SML QDSC shows lower Fpn than S–K QDSC due to the strengthened field screening effect from 160 K to 300 K. This is caused by the improved carrier thermally escaping from the SML QDs and the decreased photo-generated carrier trapping because of the reduced density of defects. The low strain-related defect density improves the efficiency of QDSC. Therefore, the Fpn obtained through the FKO signal from the photoreflectance spectrum could be a reliable method for analyzing the QDSC efficiency.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
