Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam.

Kristina Tomić Luketić,Andreja Gajović,Stjepko Fazinić,Marko Karlušić,Borna Pielić,Borna Radatović,Jacques H O’Connell,Marko Kralj

doi:10.3390/ma14081904

Kristina Tomić Luketić, Andreja Gajović + Show 6 more

Open Access

https://doi.org/10.3390/ma14081904

Copy DOI

Journal: Materials	Publication Date: Apr 11, 2021
Citations: 13	License type: CC BY 4.0

Affiliation: Rudjer Boskovic Institute, Institute of Physics

Abstract

Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.

Highlights

Ion implantation is a well-known technological process in the semiconductor industry.This approach of material modification relies on adding large amounts of foreign atoms into the host material, up to several atomic percent, to change its properties
After irradiation of pristine silicon with only 23 MeV iodine up to a fluence of 1014 ions/cm2, only a low concentration of point defects were found that caused slight de-channeling of the probing Rutherford backscattering spectrometry in the channeling mode (RBS/c) beam
We present our RBS/c, Raman spectroscopy and atomic force microscopy (AFM) results on of structure after irradiation with 600 keV ions

Summary

Introduction

Ion implantation is a well-known technological process in the semiconductor industry This approach of material modification relies on adding large amounts of foreign atoms into the host material, up to several atomic percent, to change its properties. Another approach, investigated in this work, is to utilize the energy of the ion beams to introduce defects into the material and influence its properties. In this way, the location, morphology and amount of damage can be fine-tuned by changing ion irradiation parameters (like ion type, energy and fluence) [1,2]. It is essential to understand damage production due to ion irradiation in both materials, and dedicated experiments using accelerator-based techniques are often chosen as the most suitable approach for systematic studies in controlled environments

Objectives

Methods

Results

Conclusion