Abstract
In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.
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