Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC

Abstract

Single crystal 6H-SiC samples were irradiated at room temperature with 200 keV Al+ ions at fluences ranging from 3.5×1013 to 2.8×1014 ion/cm2. Depth profiles of crystal defects both in the C and Si sublattices were measured by Backscattering Spectrometry combined with channeling technique (BS/C) at 3550 keV 4He+ ion beam energy along the 〈0001〉 axial channeling direction. Damage in the carbon sublattice was found to be higher than in the silicon one. Moreover, the C/Si damage ratio decreased with increasing fluence. The crystal defect profiles can be well simulated both by full-cascade SRIM and Crystal–TRIM programs. Effective displacement energies for carbon and silicon sublattices in the applied fluence range of Al implantation were determined by comparing SRIM simulations to BS/C results.