Abstract
Abstract We have investigated the MOCVD growth of InGaAs/GaAs ( x ~ 18%) quantum well heterostructures on non-planar substrates. Studies were performed for etched mesas aligned parallel to [1⌽10] or [110] crystallographic directions. Distinctly different growth habits and layer characteristics were observed for growth on differently oriented patterns. For [1⌽10] oriented mesa stripes the relative growth rate on the mesa top compared to that on the facet side wall was found to vary with growth temperature, increasing from a value
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