Abstract
The intrinsic defects and their distribution in CdSe/ZnSe self-assembled quantum dot heterostructures grown under variation of VI/II group beam pressure ratio are investigated by luminescent and high-resolution X-ray diffraction methods. In all samples the self-activated emission connected with donor-acceptor pairs V Zn–D is found. Analysis of excitation spectra of this band shows that vacancy related defects are mainly localised in ZnCdSe wetting layer. It is found that increase of Se beam pressure results in: (i) the increase of the number of metal vacancy related defects and their appearance on nanoisland interface; (ii) enhancement of Cd/Zn interdiffusion process; (iii) the decrease of Cd content in nanoislands and suppression of nanoisland formation. It is proposed that observed transformation of nanoisland emission band is mainly caused by enhancement of interdiffusion process.
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