Abstract
The interfacial reaction products and stress distribution in a selective laser melted Al12Si/SiC composite are studied using confocal Raman microscopy. Results reveal that needle‐like Al4C3 and equiaxed Si are located at the interface between the Al matrix and SiC particles. This reaction is triggered by the high temperature within the SiC due to its high laser absorptivity. Raman frequency shifts to lower wavenumber are observed in both the SiC and Si, suggesting the existence of tensile stress within the interface. The tensile stress in SiC is higher in the build direction than in the direction perpendicular to the build direction. No such difference is observed in the Si. The reason is ascribed to the Gaussian distribution of the laser energy density and stress relief through the interfacial reaction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.