Abstract
Impacts of the interconnect design on the mechanical reliability of Cu/low-k multi-layer interconnects were investigated using Finite Element Analysis. The Chip package interaction (CPI) was analyzed to calculate the energy release rate (ERR). First, impacts of dielectric material properties on CPI were studied using a four metal layer model. Then the study was extended to seven and nine metal layer models were used to investigate the CPI impacts to crack driving forces. Finally, implications on interconnect design rules and reliabilities will be discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
