Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Abstract

The Si samples containing the B marker layer or pre-buried dislocation loop layer were implanted with 140 keV 1×10 15 Ge/cm 2 and 30 keV 5×10 13–1×10 15 B/cm 2, respectively. The interaction mechanism between the damage distributions arising from different implant stages was investigated by means of monitoring the interstitial fluxes during anneal by transient enhancement diffusion (TED) of the B marker and the evolution of the end of range (EOR) dislocation loop `detectors'. The results demonstrate further that the distribution where secondary defects formed first will getter the Si interstitials from the other damage profile and affect the formation of secondary defect there. The experiment shows the formation of the B–Si interstitial clusters affected the diffusion of B impurity atoms and Si self-interstitials. The results might offer a basic knowledge for designing the ion beam defect engineering (IBDE).