Abstract
The characteristics of heterojunction lasers and light-emitting diodes grown on n- and p-type substrates in a four-component InGaPAs solid solution were compared. Investigations were made of the spectral, temporal, power, and radiative characteristics. The temperature dependence of the threshold current of a heterojunction laser (1.07 μ, 300°K) was compared with the corresponding dependence of an InP homojunction laser. Stimulated emission at λ = 1.19 μ was obtained from an InP–lnGaPAs system at room temperature.
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