Abstract
In this paper, the characteristics and device mechanism of InP/InGaAs pnp δ-doped heterojunction bipolar transistor are demonstrated. The additions of a δ-doped sheet and two spacer layers efficiently eliminate the potential spike at emitter–base junction, lower the emitter–collector offset voltage, and increase the confinement effect for electrons, simultaneously. The components of base current and the influence of δ-doped sheet on the potential spike are depicted. Experimentally, excellent device performances including a maximum current gain of 50 and a low offset voltage of 70 mV are achieved for the device with a δ-doped density of 2 × 10 12 cm −2. The experimental results are consistent with the theoretical analysis.
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