Abstract
In this work, the electrical property of Au/graphene oxide/p-InP hetero-structure has been evaluated by I–V and C–V measurements in dark and illuminated conditions (visible light). The diode exhibited significant rectifying behavior, thus indicating the heterojunction-type diode. The key electrical parameters of heterojunction diode including ideality factor (n), series resistance (Rs), shunt resistance (Rsh), and barrier height (Фb) are estimated from I–V data based on the theory of thermionic emission. The modified Norde and Cheung’s methods were utilized to evaluate the electrical parameters and compared the results. The current conduction mechanism at different voltage regions of I–V has also been investigated. The variation of 1/C2 versus voltage signifies linearity at high frequency (1 MHz), indicating that the type of heterojunction can be abrupt. The experimental outcomes of this study revealed that the performance of heterojunction diode in dark is considerably good as compared to the illumination condition with respect to the lower values of Фb, n, Rs, and interface state density (Nss).
Highlights
Owing to the intriguing properties of III–V semiconductors, in particular, indium phosphide (InP) is a kind of prominent semiconductor material and extensively employed in the development of optoelectronic and microwave devices [1, 2]
In the meantime, InPbased Schottky junctions suffer low Schottky barrier height, which will cause a huge leakage current and degenerate the performance of the devices resulting from the high surface state density and other nonstoichiometric defects [10]
From Eqs. (1) and (2), the ideality factor and barrier height can be rearranged as n = q d V − IRS kT d(ln I)
Summary
Owing to the intriguing properties of III–V semiconductors, in particular, indium phosphide (InP) is a kind of prominent semiconductor material and extensively employed in the development of optoelectronic and microwave devices [1, 2] It has numerous applications including metal/insulator/semiconductor field effect transistors, photodetectors, solar cells, microwave sources, and amplifiers [3,4,5,6,7]. There were no reports on heterojunction diode fabrication using graphene oxide (GO) Schottky contact on p-type InP with a detailed electrical characterization. In this context, a thin graphene oxide film was used as an interlayer at the metal/semiconductor interface and the properties of the heterojunction were investigated under dark and illuminated conditions. The main electrical parameters under dark and illuminated conditions were evaluated, compared, and discussed in detail
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