Abstract
Hydrogen-induced degradation in Pb(ZrxTi1−x)O3 (PZT) thin film capacitors is investigated in terms of three process parameters, such as electrode structures (Pt/PZT/Pt and Ir/IrO2/PZT/Pt/IrO2), Zr/Ti compositional ratios (60/40, 53/47, 40/60, 30/70), and the domain poling states (±5 V). It was found that the hydrogen-induced degradation is enhanced when PZT films have high Ti portion, and can be suppressed by domain poling prior to the hydrogen anneal. From secondary ion mass spectroscopy analysis, it can be concluded that the hydrogen-induced degradation originates mainly from the interface of PZT and Pt electrodes. Hysteresis loop shifts in PZT capacitors indicate that negative charge develops at interfaces by the hydrogen anneal. Chemically, hydrogen-induced degradation can be elucidated as the formation of negatively charged hydroxyl group (OH−).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
