Abstract
High quality methyl ammonium lead iodide (MAPbI3) perovskite material based single junction solar cell was investigated by simulation. We observed a systematic variation in device performance due to a variation in optical absorption of the active layer. By changing thickness of absorber layer from 50nm to 1000nm, we obtained power conversion efficiency (PCE) of the photovoltaic devices varying from 7.9% to 21.1%. Its open circuit voltage (Voc) varied from 1.26V to 1.16V, short circuit current density (Jsc) varied from 7.56mA/cm2 to 22.61mA/cm2 while the fill factor (FF) remained constant at 83% in this variation. Front surface of the solar cell was kept non-textured, however, back reflection of unabsorbed light was used in the analysis. The maximum PCE of 21.1% and Jsc of 22.61mA/cm2 was observed for the solar cell with 1000nm absorber layer. The Jsc and device efficiency increases with increased thickness of absorber layer (di). Therefore, higher PCE can be obtained with a thicker absorber layer. However, we identify that, with 94nm thick absorber layer, the rate of change of PCE is equal to the rate of change of Jsc, due to the thickness variation. In this cell with 94nm thick absorber layer (Cell-94), the PCE was 11.5%, nearly half of the PCE obtained with 1000nm absorber layer. In the Cell-94, the diode ideality factor was 2.04, and reverse saturation current density was 6×10−13 Amp/cm2.
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