Abstract
Indium-doped GaAs layers are investigated by low-field Hall effect, photoluminescence, and double crystal x-ray diffraction in order to study the influence of the In concentration on the electrical, optical, and crystallographic properties. The layers were grown by liquid phase epitaxy from solution with In concentrations in the range 0–10 at.%. It was found that epitaxial growth from the melt with 7 at.% In content produces the highest quality epitaxial layers.
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