Abstract
The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region from 420?C to 550?C with different source to substrate spacings, varying from 1 to 11 mm. It was found that the dependence of the growth rate on temperature could be well described by an Arrhenius type equation with an activation energy of 80 kJ/mol in the investigated temperature interval. The activation energies for the crystallization were the same for all the investigated source to substrate spacing.This activation energy value points to the importance of a solid-state diffusion process in the Hg 1-x Cdx Te/CdTe epitaxial couple obtained by isothermal growth under the given experimental conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
