Abstract
(Au, Pt)/HfO2/SiO2/n-Si(001) metal-oxide-semiconductor structures with a thin (≈0.5 nm) SiO2 layer, which is formed between HfO2 and Si during atomic layer deposition of oxide layers, have been investigated via ballistic electron emission spectroscopy. The potential barrier heights at the (Au, Pt)/HfO2 interfaces have been determined experimentally. The peculiarities observed in the curves of dependence of the collector current on the voltage between a scanning tunneling microscope probe and a metallic electrode are related to electron transport through the vacancy defect region of HfO2 and the quantum-mechanical interference of electron waves arising from multiple reflections at the interfaces of the two-layer dielectric and at the interfaces of dielectric with a substrate and a metallic electrode.
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