Abstract
We presented ab initio calculations of bulk structures and thin films of hafnium oxide, and heterostructures based on hafnium oxide in the tetragonal phase and silicon, structural and electronic properties are investigated. The density of states spectra is considered, the results obtained are analyzed, and some of them are compared with previously obtained data (for the studied systems).
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More From: Известия Российской академии наук. Серия физическая
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