Abstract
In this paper, we investigate the heat transport across GermaniumSilicon interface using an enhanced ballistic-diffusive equation (EBDE), where we introduce the temperature jump boundary condition coupled with a thermal boundary resistance (TBR) and an effective thermal conductivity model. This paper focuses on the thermal transport of sub-23 nm Ge/Si thin films. The present model is aimed to describe the ballistic-diffusive phonon transport across Ge/Si interface. We have found that the temperature jump occurs in the interface due to phonon-boundary interactions. In addition, the interfacial heat transport is influenced by the surface roughness effect. The prediction of the suggested EBDE model are in good accordance with analytical method reported in the literature. The proposed model shows excellent agreement with the phonon Boltzmann transport equation (BTE) approach and Monte Carlo simulation (MC). Further, the analytic model for the effective thermal conductivity (ETC) is in strong agreement with experimentally based approach and also the theoretical model.
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