Abstract
A novel r.f. plasma beam source being operated with CH 4 as the working gas has been employed for the formation of a-C:H films on (100)Si substrates. The energy E i of the ion component in the extracted electrically neutral plasma beam was varied between 120 and 600 eV. The mechanical and electrical film properties are determined and discussed in dependence of E i, which in turn is shown to control the hydrogen content of the films in a definite manner.
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