Abstract
AbstractAn optimization of SiOxNy anti‐reflective coatings with graded index layers for silicon solar cells based on the Bruggeman's effective medium approximation is presented. For simulation of reflectance and absorption of graded layer, the experimental optical data of silicon nitride SiNx:H and oxynitride SiOxNy obtained by Low Frequency (440 kHz) Plasma Enhanced Chemical Vapour Deposition (LF‐PECVD) were used. We have shown that the graded index oxynitride antireflection coating can reduce the effective reflectance to about 2.5% but the high absorption due to high extinction coefficient compensates this improvement and reduces the short circuit current (Jsc) of the solar cell. The improvement in the Jsc can be obtained for graded SiNxOy layer with smaller value of refractive index of SiNx (n = 2.2). In this case the graded SiOxNy layer is characterized by an abrupt concentration profile and can be considered as a double antireflection coating SiO2/SiNx. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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