Abstract
Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum e±ciency (IQE) are studied numerically. Simulation results show that the e±ciency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection e±ciency could be one of the main reasons for these improvements.
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