Abstract
We have observed flux trapping in high- T c thin films with moats fabricated by focused Ga ion beam etching using a scanning SQUID microscope (SSM) system. Flux exclusion effect was investigated for moats or moat patterns with various moat depths on a 190-nm-thick NdBa 2Cu 3O y (NBCO) sputtered thin film and a 120-nm-thick La 0.2Y 0.9Ba 1.9Cu 3O y (La-YBCO) sputtered thin film. It was found that magnetic flux can be trapped into a moat with a moat depth smaller than the film thickness. In addition, we confirmed that the array of 136-μm-long and 4-μm-wide moats certainly suppress flux trapping inside the moat-surrounded 160 × 160 μm 2 area even when its moat depth is only 19% of the film thickness of 190 nm.
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