Abstract
The ion beam synthesis process of CoSi 2 by writing stoichiometric ion implantation and subsequent annealing has been studied. For this a Focused Ion Beam (FIB), equipped with a Co 36Nd 64 alloy liquid metal ion source, was applied. Si(1 0 0) and (1 1 1) wafers were implanted with 60 keV Co 2+ ions in the dose range of 2 × 10 16–2 × 10 17 cm −2. The implantation parameters, like pixel dwell time, relaxation time, dose rate as well as the pixel overlapping factor were investigated. During subsequent annealing CoSi 2 nanostructures with dimensions down to 10 nm have been achieved. To investigate the silicide formation more in detail the annealing process was done in situ in a transmission electron microscope (TEM) on a pre-dimpled and FIB implanted samples of a Si(1 1 1). The formation of the cobalt silicide nano-crystals was monitored by plane-view TEM imaging during a 30 min heat treatment at 600 °C in vacuum.
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