Abstract

Patterned ferromagnetic structures are intended as electrodes to drive a spin-polarized current through the quasi two-dimensional electron system of a semiconductor. To utilize such structures in transport experiments it is important to know their micromagnetic behavior. We have prepared Permalloy electrodes for the ballistic transport regime by electron-beam lithography on InAs single crystals. Using magnetic-force microscopy we measure the magnetization configurations at zero external magnetic fields. Micromagnetic simulations verify that the observed magnetization states are the energetically most favorable ones. In addition, the micromagnetic behavior in external magnetic fields is simulated.

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