Abstract
Schottky barrier height (SBH; ΦB) and their dependence on the work function of metals (ΦM) at semipolar (11–22) p-GaN surfaces were investigated using Schottky diodes fabricated with different metals. The SBH increased with temperature, whereas the ideality factor decreased. This behavior was explained by means of the barrier inhomogeneity model, giving the mean barrier heights of 1.93–2.05eV for different metals. The S-parameter (dΦB/dΦM) was obtained to be 0.04. This small S-parameter implies that the surface Fermi level is nearly perfectly pinned at deep-level states (caused by vacancy-related and/or Mg-induced defects) located at 1.98eV above the valence band. This finding indicates that the surface modification is essentially required for the formation of high-quality ohmic and/or Schottky contacts.
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