Investigation of energy transfer mechanism in Er3+ and Tm3+ doped AlN crystalline films

Abstract

In this work, Er-implanted AlN, Tm-implanted AlN and Er, Tm co-implanted AlN were prepared. All samples were annealed after ion-implantation. The optical and structural properties of the samples were characterized by cathodoluminescence and X-ray diffraction, respectively. For Er-implanted AlN, the dominant sharp emission lines centered at 410 and 480 nm were observed. For Tm-implanted AlN, the dominant sharp emission line centered at 467 nm was observed. After Er was implanted into AlN: Tm, the intensity ratio of 370 nm and 467 nm in Er, Tm co-implanted AlN is almost 10 times of that in AlN: Tm. Meanwhile, the Tm emission lines centered at 685 nm and 776 nm disappeared, which can be illuminated on the viewpoint of near resonance energy transfer between Tm and Er in AlN host.