Abstract
This work examines the electrostatic integrity for UTB GeOI and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that the QC effect improves the subthreshold swing of UTB devices. Since Ge, InGaAs, and Si channels exhibit different degree of quantum confinement due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons among UTB GeOI, InGaAs-OI, and SOI MOSFETs regarding the subthreshold swing are made.
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