Abstract
Knowledge about space-charge layers and transport parameters in thin films is necessary for an understanding of the electrical properties of semiconductor heterostructures and metal-semiconductor junctions. The application of high-resolution electron energy-loss spectroscopy (HREELS) for the investigation of such problems is briefly discussed. As an example for the study of a space-charge layer the coupled surface plasmon/phonon polaritons measured in HREELS yield information about carrier density and band bending in the depletion layer generated by oxygen adsorption on InSb(110). HREELS studies of Sn films deposited on InSb(110) illustrate how information about transport parameters of the overlayers can be obtained. Some other results about thin metal films on semiconductor surfaces are also presented.
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