Abstract
The present study investigated the effect of a silane flow rate on chemical bonding structures of silicon nanowires (SiNWs) synthesized by atmospheric pressure chemical vapor deposition. The structural and chemical bonding structures were studied by Raman spectroscopy, Fourier transform infrared spectroscopy, and field emission scanning electron microscopy. The peak at 500 cm−1 in Raman spectra indicated the nanocrystalline SiNWs with outer matrix of a-Si/SiO2. X-ray photoelectron spectroscopy has been used to study the electronic structure and plasmon energy of SiNWs. The electronic environments of core orbital spectra of Si(2p) and O(1s) have been analyzed by the binding energy between constituent atoms. The plasmon spectra from different nanowires were estimated from curve fitting techniques with varying SiH4 flow rate. The peak at 17 eV is due to the Si plasmon in core SiNWs while the peak for interstitial Au appeared at ∼10 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
